Intel's 28F512 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F512 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-board during subassembly test; in-system during final test; and in-system after-sale. The 28F512 increases memory flexibility, while contributing to time- and cost-savings.
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